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                              P204:固态紫外器件技术-SSLCHINA & IFWS

                              SSLCHINA & IFWS系列会议


                              第三代半导体材料在紫外器件中具备其他半导体材料难以比拟的优势,展现出巨大的应用潜力。本分会将重点关注以氮化铝镓、氮化镓为代表的紫外发光材料,以碳化硅、氮化镓为代表的紫外探测材料,高效量子结构设计及外延,以及发光二极管、激光器、光电探测器等核心器件的关键制备技术。分会还将涵盖紫外器件的先进封装材料及技术,包括光提取、热管理及器件可靠性的提升方法。分会面向全球广泛征集优秀研究成果,并将邀请多名国际知名与家参加本次会议,力图全面呈现紫外发光和探测领域在材料、器件、封装及应用等各层面的国内外最新进展。


                              分会主席:

                              王军喜——中科院半导体研究所研究员、中科院半导体照明研发中心副主任

                              康俊勇——厦门大学教授

                              分会委员:

                              陆  海——南京大学教授

                              郭浩中——台湾交通大学特聘教授

                              李晓航——沙特国王科技大学副教授


                              P204:固态紫外器件技术/ Solid-State Ultraviolet Device Technology

                              时间:20191127日 上午 09:00 -12:00

                              地点:深圳会展中心•六层水仙厅  (PPT显示比例:16:9)

                              Time: Nov 27th, 2019 Morning 09:00 -12:00

                              Location: Shenzhen Convention and Exhibition Center 6th Floor Narcissus Hall

                              主持人

                              Moderator

                              康俊勇/KANG Junyong

                              厦门大学教授/Professor of Xiamen University

                              王军喜/ WANG Junxi

                              中科院半导体所研究员、半导体照明研发中心主任/ Professor and Director of R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences

                              09:00-09:25

                              采用石墨烯衬底和透明底部电极的AlGaN纳米线外延 UV LED

                              AlGaN nanowire UV LED using graphene as substrate and transparent bottom electrode

                              Helge WEMAN    挪威科学技术大学教授,挪威科学技术院院士

                              Helge WEMAN    Professor at the Norwegian University of Science and Technology (NTNU), Norway; Academician of the Norwegian Academy of Technical Sciences (NTVA)

                              09:25-09:50

                              基于宽禁带半导体以及相关应用的UV检测仪器发展现状

                              Recent Development of UV Photodetectors based on Wide Bandgap Semiconductors and Their Applications

                                海  南京大学教授

                              LU Hai    Professor of Nanjing University

                              09:50-10:15

                              新型深紫外LED封装发光技术提升

                              Improvement of Light extraction of Deep UV LED using Novel package

                              郭浩中  台湾交通大学特聘教授

                              Hao-Chung(Henry)  KUODistinguished Professor at National Chiao Tung University

                              10:15-10:35

                              基于中微Prismo HiT3TM MOCVD设备的深紫外LED结构优化

                              Optimization of AlGaN Based UVC LED Structure with AMEC Prismo HiT3 MOCVD Platform

                              胡建正 中微半导体设备(上海)股份有限公司主任工艺工程师

                              HUJianzheng    Principle Member of Technical Stuff of AMEC

                              10:35-10:50

                              茶歇/Tea Break

                              10:50-11:15

                              大批量工艺制备的高质量氮化铝模板材料表征分析

                              Characterization of high-quality AlN templates in industrial massive production

                                亮  上海大学教授、Ultratrend Technologies Inc总裁

                              WULiangProfessor of Shanghai University, CEOof Ultratrend Technologies Inc

                              11:15-11:35

                              基于氮化物半导体和碳化硅光电子器件的仿真与分析

                              Numerical modelling and experimental demonstration for Nitride and SiC optoelectronic devices

                              张紫辉 河北工业大学教授

                              ZHANGZihuiProfessorof Hebei University of Technology

                              11:35-11:45

                              直接在4英寸高温退火溅射AlN模板上生长的AlGaN基紫外LED

                              AlGaN-based UV LED directly grown on 4-inch high-temperature annealed sputtered AlN template

                              倪茹雪 中科院半导体所

                              NI RuxueInstitute of Semiconductors, Chinese Academy of Sciences

                              11:45-11:55

                              采用n-AlxGa1-xN低波导层连续分级生长的深紫外纳米线激光二极管光学约束优化

                              Enhancement of Optical Confinement in Deep Ultraviolet Nanowire Laser Diode by Continuous-grading of n-AlxGa1-xN Lower Waveguide Layer.

                              Muhammad Nawaz Sharif郑州大学

                              Muhammad Nawaz SharifZhengzhou University

                              11:55-12:05

                              可原子尺度精确调控的AlN/GaN结构分选生长

                              Digital-alloyed AlN/GaN superlattices featuring with integral monolayer scale by hierarchical growth units

                                娜 厦门大学

                              GAONaXiamenUniversity

                              12:05-12:15

                              用于DUVEUV探测的高性能SiC肖特基势垒光电二极管

                              High-Performance SiC Schottky barrier photodiode for DUV and EUV detection

                              王致远  南京大学

                              WANGZhiyuanNanjingUniversity

                              12:30-14:00

                              午休/Adjourn

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